Solid source growth of Si oxide nanowires promoted by carbon nanotubes

We report a method to promote solid source growth of Si oxide nanowires (SiONWs) by using an array of vertically aligned carbon nanotubes (CNTs). It starts with the fabrication of CNT array by plasma enhanced chemical vapor deposition (PECVD) on Si wafers, followed by growth of SiONWs. Herein, CNTs...

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Main Authors: Lu, Congxiang, Liu, Wen-wen, Tan, Chong Wei, Tay, Beng Kang, Coquet, Philippe, Wang, Xingli, Li, Xiaocheng
其他作者: School of Electrical and Electronic Engineering
格式: Article
語言:English
出版: 2014
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在線閱讀:https://hdl.handle.net/10356/103625
http://hdl.handle.net/10220/24540
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spelling sg-ntu-dr.10356-1036252020-03-07T14:00:37Z Solid source growth of Si oxide nanowires promoted by carbon nanotubes Lu, Congxiang Liu, Wen-wen Tan, Chong Wei Tay, Beng Kang Coquet, Philippe Wang, Xingli Li, Xiaocheng School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Applications of electronics We report a method to promote solid source growth of Si oxide nanowires (SiONWs) by using an array of vertically aligned carbon nanotubes (CNTs). It starts with the fabrication of CNT array by plasma enhanced chemical vapor deposition (PECVD) on Si wafers, followed by growth of SiONWs. Herein, CNTs serve as a scaffold, which helps the dispersion of catalysts for SiONWs and also provides space for hydrogen which boosts the diffusion of Si atoms and hence formation of SiONWs. As the result, a three dimensional (3D) hybrid network of densely packed SiONWs and CNTs can be produced rapidly. Accepted version 2014-12-26T04:42:40Z 2019-12-06T21:16:35Z 2014-12-26T04:42:40Z 2019-12-06T21:16:35Z 2014 2014 Journal Article Lu, C., Liu, W.-w., Wang, X., Li, X., Tan, C. W., Tay, B. K., et al. (2014). Solid source growth of Si oxide nanowires promoted by carbon nanotubes. Applied surface science, 314, 119-123. 0169-4332 https://hdl.handle.net/10356/103625 http://hdl.handle.net/10220/24540 10.1016/j.apsusc.2014.06.141 en Applied surface science © 2014 Elsevier B.V. This is the author created version of a work that has been peer reviewed and accepted for publication by Applied Surface Science, Elsevier B.V. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1016/j.apsusc.2014.06.141]. 14 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering::Applications of electronics
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Applications of electronics
Lu, Congxiang
Liu, Wen-wen
Tan, Chong Wei
Tay, Beng Kang
Coquet, Philippe
Wang, Xingli
Li, Xiaocheng
Solid source growth of Si oxide nanowires promoted by carbon nanotubes
description We report a method to promote solid source growth of Si oxide nanowires (SiONWs) by using an array of vertically aligned carbon nanotubes (CNTs). It starts with the fabrication of CNT array by plasma enhanced chemical vapor deposition (PECVD) on Si wafers, followed by growth of SiONWs. Herein, CNTs serve as a scaffold, which helps the dispersion of catalysts for SiONWs and also provides space for hydrogen which boosts the diffusion of Si atoms and hence formation of SiONWs. As the result, a three dimensional (3D) hybrid network of densely packed SiONWs and CNTs can be produced rapidly.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Lu, Congxiang
Liu, Wen-wen
Tan, Chong Wei
Tay, Beng Kang
Coquet, Philippe
Wang, Xingli
Li, Xiaocheng
format Article
author Lu, Congxiang
Liu, Wen-wen
Tan, Chong Wei
Tay, Beng Kang
Coquet, Philippe
Wang, Xingli
Li, Xiaocheng
author_sort Lu, Congxiang
title Solid source growth of Si oxide nanowires promoted by carbon nanotubes
title_short Solid source growth of Si oxide nanowires promoted by carbon nanotubes
title_full Solid source growth of Si oxide nanowires promoted by carbon nanotubes
title_fullStr Solid source growth of Si oxide nanowires promoted by carbon nanotubes
title_full_unstemmed Solid source growth of Si oxide nanowires promoted by carbon nanotubes
title_sort solid source growth of si oxide nanowires promoted by carbon nanotubes
publishDate 2014
url https://hdl.handle.net/10356/103625
http://hdl.handle.net/10220/24540
_version_ 1681047451630305280