Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy

• المؤلفون الرئيسيون: D'Costa, Vijay Richard, Tan, Kian Hua, Jia, Bo Wen, Yoon, Soon Fatt, Yeo, Yee-Chia
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2015
• الموضوعات: III-V semiconductors; Critical point phenomena; Dielectric thin films; Dielectric function; Epitaxy
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/104319; http://hdl.handle.net/10220/38809
• المؤسسة: Nanyang Technological University

Spectroscopic ellipsometry was used to investigate the optical properties of an InSb film grown on a GaAs (100) substrate, and to compare the optical properties of InSb film with those of bulk InSb. The film was grown by molecular beam epitaxy under conditions intended to form 90° misfit dislocation...