Dilute antimonide nitride for long wavelength infrared photodetection

• Main Authors: Chen, X. Z., Jin, Y. J., Zhang, D. H.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/104849; http://hdl.handle.net/10220/20349
• Institution: Nanyang Technological University

InSb1−xNx materials were fabricated by direct nitrogen implantation into InSb wafer and they are characterized by X-ray diffraction, Hall measurement, X-ray photoelectron spectroscopy. In-N bonds are clearly demonstrated and other forms of nitrogen, such as antisites (NIn), interstitial N2 , also ex...