Electron-beam radiation induced degradation of silicon nitride and its impact to semiconductor failure analysis by TEM

• المؤلفون الرئيسيون: Liu, Binghai, Dong, Zhi Li, Hua, Younan, Fu, Chao, Li, Xiaomin, Tan, Pik Kee, Zhao, Yuzhe
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2019
• الموضوعات: DRNTU::Engineering::Materials; Failure Analysis; Semiconductors
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/105002; http://hdl.handle.net/10220/47400
• المؤسسة: Nanyang Technological University

By in-situ transmission electron microscopy (TEM), we performed a detailed study on the electron-beam radiation damage to nanostructured silicon nitride thin-film process layers in a typical semiconductor NVM device. It was found that high-dose electron-beam radiation at 200 kV led to rapid degradat...