Electron-beam radiation induced degradation of silicon nitride and its impact to semiconductor failure analysis by TEM

• Main Authors: Liu, Binghai, Dong, Zhi Li, Hua, Younan, Fu, Chao, Li, Xiaomin, Tan, Pik Kee, Zhao, Yuzhe
• 其他作者: School of Materials Science & Engineering
• 格式: Article
• 語言: English
• 出版: 2019
• 主題: DRNTU::Engineering::Materials; Failure Analysis; Semiconductors
• 在線閱讀: https://hdl.handle.net/10356/105002; http://hdl.handle.net/10220/47400

By in-situ transmission electron microscopy (TEM), we performed a detailed study on the electron-beam radiation damage to nanostructured silicon nitride thin-film process layers in a typical semiconductor NVM device. It was found that high-dose electron-beam radiation at 200 kV led to rapid degradat...