Low temperature grown GaNAsSb : a promising material for photoconductive switch application

We report a photoconductive switch using low temperature grown GaNAsSb as the active material. The GaNAsSb layer was grown at 200 °C by molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and a valved antimony cracker source. The low temperature growth of the...

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Bibliographic Details
Main Authors: Li, D. S., Saadsaoud, N., Tripon-Canseliet, C., Lampin, J. F., Decoster, D., Chazelas, J., Yoon, Soon Fatt, Wicaksono, Satrio, Loke, Wan Khai, Tan, Kian Hua
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/105345
http://hdl.handle.net/10220/16573
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Institution: Nanyang Technological University
Language: English
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