Low temperature grown GaNAsSb : a promising material for photoconductive switch application

Low temperature grown GaNAsSb : a promising material for photoconductive switch application

We report a photoconductive switch using low temperature grown GaNAsSb as the active material. The GaNAsSb layer was grown at 200 °C by molecular beam epitaxy in conjunction with a radio frequency plasma-assisted nitrogen source and a valved antimony cracker source. The low temperature growth of the...

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書目詳細資料
Main Authors:	Li, D. S., Saadsaoud, N., Tripon-Canseliet, C., Lampin, J. F., Decoster, D., Chazelas, J., Yoon, Soon Fatt, Wicaksono, Satrio, Loke, Wan Khai, Tan, Kian Hua
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2013
主題:	DRNTU::Engineering::Electrical and electronic engineering
在線閱讀:	https://hdl.handle.net/10356/105345 http://hdl.handle.net/10220/16573
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

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