A low-profile three-dimensional neural probe array using a silicon lead transfer structure

• Main Authors: Cheng, Ming-Yuan, Je, Minkyu, Tan, Kwan Ling, Tan, Ee Lim, Lim, Ruiqi, Yao, Lei, Li, Peng, Park, Woo-Tae, Phua, Eric Jian Rong, Gan, Chee Lip, Yu, Aibin
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Materials
• Online Access: https://hdl.handle.net/10356/105705; http://hdl.handle.net/10220/17904
• Institution: Nanyang Technological University

This paper presents a microassembly method for low-profile three-dimensional probe arrays for neural prosthesis and neuroscience applications. A silicon (Si) lead transfer structure, Si interposer, is employed to form electrical connections between two orthogonal planes—the two dimensional probes and the dummy application-specific integrated circuit (ASIC) chip. In order to hold the probe array and facilitate the alignment of probes during assembly, a Si platform is designed to have through-substrate slots for the insertion of probes and cavities for holding the Si interposers. The electrical interconnections between the probes and the dummy ASIC chip are formed by solder reflow, resulting in greatly improved throughput in the proposed assembly method. Moreover, since the backbone of the probe can be embedded inside the cavity of the Si platform, the profile of the probe array above the cortical surface can be controlled within 750 µm. This low-profile allows the probe array not to touch the skull after it is implanted on the brain. The impedance of the assembled probe is also measured and discussed.