A low-profile three-dimensional neural probe array using a silicon lead transfer structure

This paper presents a microassembly method for low-profile three-dimensional probe arrays for neural prosthesis and neuroscience applications. A silicon (Si) lead transfer structure, Si interposer, is employed to form electrical connections between two orthogonal planes—the two dimensional probes an...

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Main Authors: Cheng, Ming-Yuan, Je, Minkyu, Tan, Kwan Ling, Tan, Ee Lim, Lim, Ruiqi, Yao, Lei, Li, Peng, Park, Woo-Tae, Phua, Eric Jian Rong, Gan, Chee Lip, Yu, Aibin
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/105705
http://hdl.handle.net/10220/17904
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1057052020-06-01T10:13:52Z A low-profile three-dimensional neural probe array using a silicon lead transfer structure Cheng, Ming-Yuan Je, Minkyu Tan, Kwan Ling Tan, Ee Lim Lim, Ruiqi Yao, Lei Li, Peng Park, Woo-Tae Phua, Eric Jian Rong Gan, Chee Lip Yu, Aibin School of Materials Science & Engineering DRNTU::Engineering::Materials This paper presents a microassembly method for low-profile three-dimensional probe arrays for neural prosthesis and neuroscience applications. A silicon (Si) lead transfer structure, Si interposer, is employed to form electrical connections between two orthogonal planes—the two dimensional probes and the dummy application-specific integrated circuit (ASIC) chip. In order to hold the probe array and facilitate the alignment of probes during assembly, a Si platform is designed to have through-substrate slots for the insertion of probes and cavities for holding the Si interposers. The electrical interconnections between the probes and the dummy ASIC chip are formed by solder reflow, resulting in greatly improved throughput in the proposed assembly method. Moreover, since the backbone of the probe can be embedded inside the cavity of the Si platform, the profile of the probe array above the cortical surface can be controlled within 750 µm. This low-profile allows the probe array not to touch the skull after it is implanted on the brain. The impedance of the assembled probe is also measured and discussed. ASTAR (Agency for Sci., Tech. and Research, S’pore) 2013-11-29T03:58:52Z 2019-12-06T21:56:12Z 2013-11-29T03:58:52Z 2019-12-06T21:56:12Z 2013 2013 Journal Article Cheng, M.-Y., Je, M., Tan, K. L., Tan, E. L., Lim, R., Yao, L., et al. (2013). A low-profile three-dimensional neural probe array using a silicon lead transfer structure. Journal of micromechanics and microengineering, 23(9), 095013. https://hdl.handle.net/10356/105705 http://hdl.handle.net/10220/17904 10.1088/0960-1317/23/9/095013 en Journal of micromechanics and microengineering
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Materials
spellingShingle DRNTU::Engineering::Materials
Cheng, Ming-Yuan
Je, Minkyu
Tan, Kwan Ling
Tan, Ee Lim
Lim, Ruiqi
Yao, Lei
Li, Peng
Park, Woo-Tae
Phua, Eric Jian Rong
Gan, Chee Lip
Yu, Aibin
A low-profile three-dimensional neural probe array using a silicon lead transfer structure
description This paper presents a microassembly method for low-profile three-dimensional probe arrays for neural prosthesis and neuroscience applications. A silicon (Si) lead transfer structure, Si interposer, is employed to form electrical connections between two orthogonal planes—the two dimensional probes and the dummy application-specific integrated circuit (ASIC) chip. In order to hold the probe array and facilitate the alignment of probes during assembly, a Si platform is designed to have through-substrate slots for the insertion of probes and cavities for holding the Si interposers. The electrical interconnections between the probes and the dummy ASIC chip are formed by solder reflow, resulting in greatly improved throughput in the proposed assembly method. Moreover, since the backbone of the probe can be embedded inside the cavity of the Si platform, the profile of the probe array above the cortical surface can be controlled within 750 µm. This low-profile allows the probe array not to touch the skull after it is implanted on the brain. The impedance of the assembled probe is also measured and discussed.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Cheng, Ming-Yuan
Je, Minkyu
Tan, Kwan Ling
Tan, Ee Lim
Lim, Ruiqi
Yao, Lei
Li, Peng
Park, Woo-Tae
Phua, Eric Jian Rong
Gan, Chee Lip
Yu, Aibin
format Article
author Cheng, Ming-Yuan
Je, Minkyu
Tan, Kwan Ling
Tan, Ee Lim
Lim, Ruiqi
Yao, Lei
Li, Peng
Park, Woo-Tae
Phua, Eric Jian Rong
Gan, Chee Lip
Yu, Aibin
author_sort Cheng, Ming-Yuan
title A low-profile three-dimensional neural probe array using a silicon lead transfer structure
title_short A low-profile three-dimensional neural probe array using a silicon lead transfer structure
title_full A low-profile three-dimensional neural probe array using a silicon lead transfer structure
title_fullStr A low-profile three-dimensional neural probe array using a silicon lead transfer structure
title_full_unstemmed A low-profile three-dimensional neural probe array using a silicon lead transfer structure
title_sort low-profile three-dimensional neural probe array using a silicon lead transfer structure
publishDate 2013
url https://hdl.handle.net/10356/105705
http://hdl.handle.net/10220/17904
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