A 32 kb 9T near-threshold SRAM with enhanced read ability at ultra-low voltage operation

• المؤلفون الرئيسيون: Kim, Tony Tae-Hyoung, Lee, Zhao Chuan, Do, Anh Tuan
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2019
• الموضوعات: Bitline Sensing; DRNTU::Engineering::Electrical and electronic engineering; Static Random Access Memory
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/105826; http://hdl.handle.net/10220/48769; http://dx.doi.org/10.1016/j.sse.2017.10.002

Ultra-low voltage SRAMs are highly sought-after in energy-limited systems such as battery-powered and self-harvested SoCs. However, ultra-low voltage operation diminishes SRAM read bitline (RBL) sensing margin significantly. This paper tackles this issue by presenting a novel 9T cell with data-indep...