A 32 kb 9T near-threshold SRAM with enhanced read ability at ultra-low voltage operation
Ultra-low voltage SRAMs are highly sought-after in energy-limited systems such as battery-powered and self-harvested SoCs. However, ultra-low voltage operation diminishes SRAM read bitline (RBL) sensing margin significantly. This paper tackles this issue by presenting a novel 9T cell with data-indep...
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| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2019
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/105826 http://hdl.handle.net/10220/48769 http://dx.doi.org/10.1016/j.sse.2017.10.002 |
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| Institution: | Nanyang Technological University |
| Language: | English |