Design and analysis of robust sensing schemes for resisitive memory

• Main Author: An, Byungkwon
• Other Authors: Kim Tae Hyoung
• Format: Thesis-Doctor of Philosophy
• Language: English
• Published: Nanyang Technological University 2024
• Subjects: Engineering; Resistive random-access memory (RRAM); Sensing scheme; Emerging non-volatile memories (eNVMs); Resistance ratio (R-Ratio); Resistive memory; Time-based sensing scheme; Hybrid cell-to-cell comparison-based sensing scheme; Non-volatile memories; Computing in memory (CIM); Multiply-and-accumulate (MAC); Phase-change random access memory (PRAM); Spin-transfer torque magnetic random-access memory (STT-RAM); Memory integrated circuit; Multi-level cells (MLC)
• Online Access: https://hdl.handle.net/10356/181559
• Institution: Nanyang Technological University

Representatively, memory has been limitedly used in advances, such as Dynamic Random Access Memory (DRAM), Static Random Access Memory (SRAM), and Flash Memory. However, nowadays, memory is widely used in smartphones, automobiles, and the Internet of Things (IoT) in everyday electronic devices. Furt...