Design optimization for an SOI MOEMS accelerometer

Design optimization for an SOI MOEMS accelerometer

With optimization being vital, the design optimization of a silicon-on-insulator (SOI) micro-opto-electro-mechanical systems accelerometer is discussed in this paper. This process has enabled a simplistic design that employs double-sided deep reactive ion etching (DRIE) on SOI wafer to be able to at...

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Bibliographic Details
Main Authors: Teo, Adrian J. T., Li, Holden King-Ho, Tan, Say Hwa, Yoon, Yong-Jin
Other Authors: School of Mechanical and Aerospace Engineering
Format: Article
Language:English
Published: 2019
Subjects:
Design Optimization
Accelerometer
DRNTU::Engineering::Mechanical engineering
Online Access:https://hdl.handle.net/10356/106469
http://hdl.handle.net/10220/47914
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Institution: Nanyang Technological University
Language: English
Description
Summary:With optimization being vital, the design optimization of a silicon-on-insulator (SOI) micro-opto-electro-mechanical systems accelerometer is discussed in this paper. This process has enabled a simplistic design that employs double-sided deep reactive ion etching (DRIE) on SOI wafer to be able to attain high sensitivity of 294 µW/G with a calculated proof mass displacement of 0.066 µm/G which was close to ANSYS simulated results of 0.061 µm/G. Optimization has also enabled an in-depth study of the effects of the different variables on the overall performance of the device.

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