Detection of Ge and Si intermixing in Ge/Si using multiwavelength micro-raman spectroscopy

• المؤلفون الرئيسيون: Yoo, Woo Sik, Kang, Kitaek, Ueda, Takeshi, Ishigaki, Toshikazu, Nishigaki, Hiroshi, Hasuike, Noriyuki, Harima, Hiroshi, Yoshimoto, Masahiro, Tan, Chuan Seng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2015
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/106532; http://hdl.handle.net/10220/25012; http://dx.doi.org/10.1149/06406.0079ecst
• المؤسسة: Nanyang Technological University

To meet various physical property requirements of materials for advanced application, for specific devices, combinations of Si/Ge, Ge/Si, Si1-xGex/Si, are frequently introduced in the device fabrication process. Epitaxy, condensation and annealing processes are commonly used. Since a small variation...