Design of ring oscillator structures for measuring isolated NBTI and PBTI

• المؤلفون الرئيسيون: Kim, Tony Tae-Hyoung, Lu, Pong-Fei., Kim, Chris H.
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/106580; http://hdl.handle.net/10220/17772; http://dx.doi.org/10.1109/ISCAS.2012.6271555
• المؤسسة: Nanyang Technological University

Ring oscillator based test structures that can separately measure the NBTI and PBTI degradation effects in digital circuits are presented for high-k metal-gate devices. The proposed test structures enable simultaneous stress of all devices under test in either NBTI or PBTI mode and measure frequency...