Design of ring oscillator structures for measuring isolated NBTI and PBTI

Ring oscillator based test structures that can separately measure the NBTI and PBTI degradation effects in digital circuits are presented for high-k metal-gate devices. The proposed test structures enable simultaneous stress of all devices under test in either NBTI or PBTI mode and measure frequency...

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Main Authors: Kim, Tony Tae-Hyoung, Lu, Pong-Fei., Kim, Chris H.
其他作者: School of Electrical and Electronic Engineering
格式: Conference or Workshop Item
語言:English
出版: 2013
主題:
在線閱讀:https://hdl.handle.net/10356/106580
http://hdl.handle.net/10220/17772
http://dx.doi.org/10.1109/ISCAS.2012.6271555
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