Monolithic CMOS-MEMS integration for high-g accelerometers

• Main Authors: Narasimhan, Vinayak, Li, Holden, Tan, Chuan Seng
• Other Authors: Gruneisen, Mark T.
• Format: Conference or Workshop Item
• Language: English
• Published: 2015
• Subjects: DRNTU::Engineering::Mechanical engineering::Kinematics and dynamics of machinery
• Online Access: https://hdl.handle.net/10356/106720; http://hdl.handle.net/10220/25113
• Institution: Nanyang Technological University

This paper highlights work-in-progress towards the conceptualization, simulation, fabrication and initial testing of a silicon-germanium (SiGe) integrated CMOS-MEMS high-g accelerometer for military, munition, fuze and shock measurement applications. Developed on IMEC’s SiGe MEMS platform, the MEMS offers a dynamic range of 5,000 g and a bandwidth of 12 kHz. The low noise readout circuit adopts a chopper-stabilization technique implementing the CMOS through the TSMC 0.18 µm process. The device structure employs a fully differential split comb-drive set up with two sets of stators and a rotor all driven separately. Dummy structures acting as protective over-range stops were designed to protect the active components when under impacts well above the designed dynamic range.