Computer simulation and modelling of electrical characteristics of ferroelectric films for device applications

Computer simulation and modelling of electrical characteristics of ferroelectric films for device applications

Ferroelectric thin film materials have attractive properties such as high dielectric constant and reversible, large remnant polarisation. These properties have made these materials attractive in applications, namely in the areas of non-volatile random access memory (NV-RAM) and ultra-high density dy...

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Bibliographic Details
Main Author: Lee, Teng Mong.
Other Authors: Zhu, Weiguang
Format: Theses and Dissertations
Language:English
Published: 2008
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Online Access:http://hdl.handle.net/10356/13283
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Institution: Nanyang Technological University
Language: English
Description
Summary:Ferroelectric thin film materials have attractive properties such as high dielectric constant and reversible, large remnant polarisation. These properties have made these materials attractive in applications, namely in the areas of non-volatile random access memory (NV-RAM) and ultra-high density dynamic random access memory (DRAM).

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