Computer simulation and modelling of electrical characteristics of ferroelectric films for device applications

Computer simulation and modelling of electrical characteristics of ferroelectric films for device applications

Ferroelectric thin film materials have attractive properties such as high dielectric constant and reversible, large remnant polarisation. These properties have made these materials attractive in applications, namely in the areas of non-volatile random access memory (NV-RAM) and ultra-high density dy...

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Main Author: Lee, Teng Mong.
Other Authors: Zhu, Weiguang
Format: Theses and Dissertations
Language:English
Published: 2008
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Online Access:http://hdl.handle.net/10356/13283
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Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-13283
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spelling sg-ntu-dr.10356-132832023-07-04T16:00:49Z Computer simulation and modelling of electrical characteristics of ferroelectric films for device applications Lee, Teng Mong. Zhu, Weiguang School of Electrical and Electronic Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Ferroelectric thin film materials have attractive properties such as high dielectric constant and reversible, large remnant polarisation. These properties have made these materials attractive in applications, namely in the areas of non-volatile random access memory (NV-RAM) and ultra-high density dynamic random access memory (DRAM). Master of Science (Consumer Electronics) 2008-10-20T07:22:58Z 2008-10-20T07:22:58Z 1998 1998 Thesis http://hdl.handle.net/10356/13283 en 78 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
spellingShingle DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Lee, Teng Mong.
Computer simulation and modelling of electrical characteristics of ferroelectric films for device applications
description Ferroelectric thin film materials have attractive properties such as high dielectric constant and reversible, large remnant polarisation. These properties have made these materials attractive in applications, namely in the areas of non-volatile random access memory (NV-RAM) and ultra-high density dynamic random access memory (DRAM).
author2 Zhu, Weiguang
author_facet Zhu, Weiguang
Lee, Teng Mong.
format Theses and Dissertations
author Lee, Teng Mong.
author_sort Lee, Teng Mong.
title Computer simulation and modelling of electrical characteristics of ferroelectric films for device applications
title_short Computer simulation and modelling of electrical characteristics of ferroelectric films for device applications
title_full Computer simulation and modelling of electrical characteristics of ferroelectric films for device applications
title_fullStr Computer simulation and modelling of electrical characteristics of ferroelectric films for device applications
title_full_unstemmed Computer simulation and modelling of electrical characteristics of ferroelectric films for device applications
title_sort computer simulation and modelling of electrical characteristics of ferroelectric films for device applications
publishDate 2008
url http://hdl.handle.net/10356/13283
_version_ 1772825918335614976

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