Design of high performance quarter-micron retrograde well P-channel MOSFET
This thesis presents the design and optimization through fabrication and simulation of quarter-micron surface-channel pMOSFETs for low power, high speed applications. The high performance pMOSFET is realized by careful design of the channel, well and source/drain doping profile. The main features of...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/10356/13355 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | This thesis presents the design and optimization through fabrication and simulation of quarter-micron surface-channel pMOSFETs for low power, high speed applications. The high performance pMOSFET is realized by careful design of the channel, well and source/drain doping profile. The main features of the fabricated devices are non-uniform channel doping, high energy deep retrograde well, p+-polysilicon gate approach and the LDD source-drain structure. |
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