High-frequency characteristics of InGaP/GaAs double heterojunction bipolar transistor epitaxially grown on 200 mm Ge/Si wafers

• المؤلفون الرئيسيون: Loke, Wan Khai, Wang, Yue, Lee, Kwang Hong, Liu, Zhihong, Xie, Hanlin, Chiah, Siau Ben, Lee, Kenneth Eng Kian, Zhou, Xing, Tan, Chuan Seng, Ng, Geok Ing, Fitzgerald, Eugene A., Yoon, Soon Fatt
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2020
• الموضوعات: Engineering::Electrical and electronic engineering; III-V/Si Integration; Bipolar Transistors
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/137701
• المؤسسة: Nanyang Technological University

N-p-n InGaP/GaAs double heterojunction bipolar transistor has been successfully grown on a 200 mm Ge/Si wafer using metalorganic chemical vapor deposition with low defect density of 107 cm ^{-2}. Non-gold metals of Ni/Ge/Al and Ti/Al are used to form the ohmic contact for small pieces device fabrication. Both direct-current (dc) and high-frequency characteristics of the device were measured. The device with emitter area of 6\times8 \mu {\text {m}} shows a dc gain of 55 at a collector current of I-{c} = 4 mA, with high collector-emitter breakdown voltage of 17 V. The high-frequency response with cutoff frequency ( f_{T} T) of 23 GHz and maximum available frequency ( f_{\text {max}} T) of 10 GHz can be achieved. These results demonstrate that InGaP/GaAs double heterojunction bipolar transistor grown on low defect density Ge/Si wafer has the potential for realizing III-V CMOS integrated platform for high-frequency applications.