High-frequency characteristics of InGaP/GaAs double heterojunction bipolar transistor epitaxially grown on 200 mm Ge/Si wafers

• Main Authors: Loke, Wan Khai, Wang, Yue, Lee, Kwang Hong, Liu, Zhihong, Xie, Hanlin, Chiah, Siau Ben, Lee, Kenneth Eng Kian, Zhou, Xing, Tan, Chuan Seng, Ng, Geok Ing, Fitzgerald, Eugene A., Yoon, Soon Fatt
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering; III-V/Si Integration; Bipolar Transistors
• Online Access: https://hdl.handle.net/10356/137701
• Institution: Nanyang Technological University

N-p-n InGaP/GaAs double heterojunction bipolar transistor has been successfully grown on a 200 mm Ge/Si wafer using metalorganic chemical vapor deposition with low defect density of 107 cm ^{-2}. Non-gold metals of Ni/Ge/Al and Ti/Al are used to form the ohmic contact for small pieces device fabrica...