Multi-trap energy states in GaN HEMTs : characterization and modeling

• المؤلفون الرئيسيون: Binit Syamal, Zhou, Xing, Chiah, Siau Ben
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2020
• الموضوعات: Engineering::Electrical and electronic engineering; Aluminium Compounds; Band Structure
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/139024
• المؤسسة: Nanyang Technological University

In this work, presence of multi-trap energy (MTE) levels in the GaN energy bandgap of AlGaN/GaN HEMT is studied based on conductance method as well as temperature-dependent current transient measurements. Using conductance method, it is observed that the MTE model shows a better fit with the measure...