Multi-trap energy states in GaN HEMTs : characterization and modeling

• Main Authors: Binit Syamal, Zhou, Xing, Chiah, Siau Ben
• Other Authors: School of Electrical and Electronic Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering; Aluminium Compounds; Band Structure
• Online Access: https://hdl.handle.net/10356/139024
• Institution: Nanyang Technological University

In this work, presence of multi-trap energy (MTE) levels in the GaN energy bandgap of AlGaN/GaN HEMT is studied based on conductance method as well as temperature-dependent current transient measurements. Using conductance method, it is observed that the MTE model shows a better fit with the measure...