A high-bandwidth integrated current measurement for detecting switching current of fast GaN devices

• Main Authors: Wang, Kangping, Yang, Xu, Li, Hongchang, Wang, Laili, Jain, Praveen
• Other Authors: Energy Research Institute @ NTU (ERI@N)
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering; Current Measurement; Double Pulse Test Circuit
• Online Access: https://hdl.handle.net/10356/139835
• Institution: Nanyang Technological University

Gallium nitride (GaN) devices are suitable for high-frequency power converters due to their excellent switching performance. To maximize the performance of GaN devices, it is necessary to study the switching characteristics, which requires measuring the switching current. However, GaN devices have a...