Highly sensitive gas sensor based on GaN transistor structure

• 主要作者: Imran
• 其他作者: Radhakrishnan K
• 格式: Final Year Project
• 語言: English
• 出版: Nanyang Technological University 2020
• 主題: Engineering::Electrical and electronic engineering
• 在線閱讀: https://hdl.handle.net/10356/140266
• 機構: Nanyang Technological University

Sensors are widely used in our daily life applications, for example, fire sensors, biosensors, gas sensors, etc. The sensors have advanced rapidly over the past few years and they are normally used to measure a property or physical phenomena, such as pressure, position, force, temperature, or acceleration. They respond with feedback and provide a corresponding output. In electronics applications, the sensors convert physical parameter into an electrical signal which can be measured and quantified. In this project, GaN HEMT based sensors have been used to study the effects of various sensing parameters such as sensitivity, response time and recovery time for different concentrations of test gases (NH3 and NO2). In addition, demonstrations of gas detection using different functionalization layer of GaN HEMTs were performed in this project. We have also investigated the effect of device gate dimensions, the gate length to test on the sensitivity of the fabricated sensors.