Highly sensitive gas sensor based on GaN transistor structure
Sensors are widely used in our daily life applications, for example, fire sensors, biosensors, gas sensors, etc. The sensors have advanced rapidly over the past few years and they are normally used to measure a property or physical phenomena, such as pressure, position, force, temperature, or accele...
Saved in:
Main Author: | Imran |
---|---|
Other Authors: | Radhakrishnan K |
Format: | Final Year Project |
Language: | English |
Published: |
Nanyang Technological University
2020
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/140266 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
Characterizations of GaN-based high-electron-mobility-transistors (hemts)
by: Wong, Wei Jie.
Published: (2012) -
Regrown ohmic contact to GaN-based high electron mobility transistors
by: Tan, Eleen
Published: (2023) -
Studies on GaN-based semiconductor low cost ammonia gas sensors
by: Irfan Haziq Abdul Gani
Published: (2020) -
Studies of Gallium Nitride Electron Mobility Transistors (GaN HEMTs) and GaN Metal-Insulator-Semiconductor (GaN MISHEMT)
by: Lau, Sien Hui
Published: (2020) -
Studies of traps in AlGaN/GaN high electron mobility transistors on silicon
by: Anand Mulagumoottil Jesudas
Published: (2016)