The effects of strain and composition on the conduction-band offset of direct band gap type-I GeSn/GeSnSi quantum dots for CMOS compatible mid-IR light source

The effects of strain and composition on the conduction-band offset of direct band gap type-I GeSn/GeSnSi quantum dots for CMOS compatible mid-IR light source

A direct band gap type-I Ge0.75Sn0.25/Ge0.682Sn0.158Si0.16 QD heterostructure is proposed for mid-IR light sources. The effects of strain and composition are theoretically investigated to optimize the band offset of the direct band gap GeSn QDs. It is found that the introduction of tensile strain an...

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Main Authors: Chen, Qimiao, Zhang, Lin, Zhou, Hao, Li, Wei, Son, Bong Kwon, Tan, Chuan Seng
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2020
Subjects:
Engineering::Electrical and electronic engineering::Semiconductors
Mid-IR Light Source
GeSn Quantum Dot
Online Access:https://hdl.handle.net/10356/141356
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1413562020-07-07T00:59:14Z The effects of strain and composition on the conduction-band offset of direct band gap type-I GeSn/GeSnSi quantum dots for CMOS compatible mid-IR light source Chen, Qimiao Zhang, Lin Zhou, Hao Li, Wei Son, Bong Kwon Tan, Chuan Seng School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering::Semiconductors Mid-IR Light Source GeSn Quantum Dot A direct band gap type-I Ge0.75Sn0.25/Ge0.682Sn0.158Si0.16 QD heterostructure is proposed for mid-IR light sources. The effects of strain and composition are theoretically investigated to optimize the band offset of the direct band gap GeSn QDs. It is found that the introduction of tensile strain and Si incorporation in the barrier layers are effective to increase the band offset in the conduction band. Besides, the band offset is expected to increase with the increase of Sn composition in QDs and the size of QDs. NRF (Natl Research Foundation, S’pore) Accepted version 2020-06-08T02:17:28Z 2020-06-08T02:17:28Z 2020 Journal Article Chen, Q., Zhang, L., Zhou, H., Li, W., Son, B. K., & Tan, C. S. (2020). The effects of strain and composition on the conduction-band offset of direct band gap type-I GeSn/GeSnSi quantum dots for CMOS compatible mid-IR light source. Semiconductor Science and Technology, 35(2), 025008-. doi:10.1088/1361-6641/ab5d89 0268-1242 https://hdl.handle.net/10356/141356 10.1088/1361-6641/ab5d89 2 35 en NRF-CRP19-2017-01-00 Semiconductor Science and Technology © 2020 IOP Publishing Ltd. All rights reserved. This is an author-created, un-copyedited version of an article accepted for publication in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The definitive publisher authenticated version is available online at https://doi.org/10.1088/1361-6641/ab5d89 application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic Engineering::Electrical and electronic engineering::Semiconductors
Mid-IR Light Source
GeSn Quantum Dot
spellingShingle Engineering::Electrical and electronic engineering::Semiconductors
Mid-IR Light Source
GeSn Quantum Dot
Chen, Qimiao
Zhang, Lin
Zhou, Hao
Li, Wei
Son, Bong Kwon
Tan, Chuan Seng
The effects of strain and composition on the conduction-band offset of direct band gap type-I GeSn/GeSnSi quantum dots for CMOS compatible mid-IR light source
description A direct band gap type-I Ge0.75Sn0.25/Ge0.682Sn0.158Si0.16 QD heterostructure is proposed for mid-IR light sources. The effects of strain and composition are theoretically investigated to optimize the band offset of the direct band gap GeSn QDs. It is found that the introduction of tensile strain and Si incorporation in the barrier layers are effective to increase the band offset in the conduction band. Besides, the band offset is expected to increase with the increase of Sn composition in QDs and the size of QDs.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Chen, Qimiao
Zhang, Lin
Zhou, Hao
Li, Wei
Son, Bong Kwon
Tan, Chuan Seng
format Article
author Chen, Qimiao
Zhang, Lin
Zhou, Hao
Li, Wei
Son, Bong Kwon
Tan, Chuan Seng
author_sort Chen, Qimiao
title The effects of strain and composition on the conduction-band offset of direct band gap type-I GeSn/GeSnSi quantum dots for CMOS compatible mid-IR light source
title_short The effects of strain and composition on the conduction-band offset of direct band gap type-I GeSn/GeSnSi quantum dots for CMOS compatible mid-IR light source
title_full The effects of strain and composition on the conduction-band offset of direct band gap type-I GeSn/GeSnSi quantum dots for CMOS compatible mid-IR light source
title_fullStr The effects of strain and composition on the conduction-band offset of direct band gap type-I GeSn/GeSnSi quantum dots for CMOS compatible mid-IR light source
title_full_unstemmed The effects of strain and composition on the conduction-band offset of direct band gap type-I GeSn/GeSnSi quantum dots for CMOS compatible mid-IR light source
title_sort effects of strain and composition on the conduction-band offset of direct band gap type-i gesn/gesnsi quantum dots for cmos compatible mid-ir light source
publishDate 2020
url https://hdl.handle.net/10356/141356
_version_ 1681059283320438784

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