The effects of strain and composition on the conduction-band offset of direct band gap type-I GeSn/GeSnSi quantum dots for CMOS compatible mid-IR light source

• Main Authors: Chen, Qimiao, Zhang, Lin, Zhou, Hao, Li, Wei, Son, Bong Kwon, Tan, Chuan Seng
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2020
• 主題: Engineering::Electrical and electronic engineering::Semiconductors; Mid-IR Light Source; GeSn Quantum Dot
• 在線閱讀: https://hdl.handle.net/10356/141356

A direct band gap type-I Ge0.75Sn0.25/Ge0.682Sn0.158Si0.16 QD heterostructure is proposed for mid-IR light sources. The effects of strain and composition are theoretically investigated to optimize the band offset of the direct band gap GeSn QDs. It is found that the introduction of tensile strain an...