InAlN/GaN HEMTs on Si With High fT of 250 GHz

In this letter, InAlN/GaN high electron mobility transistors (HEMTs) with 40-200 nm rectangular gates and 300-700 nm source-to-drain distances were fabricated on Si substrates. The device with 40-nm gate and 300-nm source-to-drain distance exhibited a high drain current of 2.66 A/mm, a transconducta...

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Main Authors:	Xing, Weichuan, Liu, Zhihong, Qiu, Haodong, Ranjan, Kumud, Gao, Yu, Ng, Geok Ing, Palacios, Tomás
Other Authors:	School of Electrical and Electronic Engineering
Format:	Article
Language:	English
Published:	2020
Subjects:	Engineering::Electrical and electronic engineering GaN High Electron Mobility Transistor (HEMT)
Online Access:	https://hdl.handle.net/10356/141469
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Institution:	Nanyang Technological University
Language:	English

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spelling	sg-ntu-dr.10356-1414692020-06-08T09:23:46Z InAlN/GaN HEMTs on Si With High fT of 250 GHz Xing, Weichuan Liu, Zhihong Qiu, Haodong Ranjan, Kumud Gao, Yu Ng, Geok Ing Palacios, Tomás School of Electrical and Electronic Engineering Temasek Laboratories Engineering::Electrical and electronic engineering GaN High Electron Mobility Transistor (HEMT) In this letter, InAlN/GaN high electron mobility transistors (HEMTs) with 40-200 nm rectangular gates and 300-700 nm source-to-drain distances were fabricated on Si substrates. The device with 40-nm gate and 300-nm source-to-drain distance exhibited a high drain current of 2.66 A/mm, a transconductance (gm) of 438 mS/mm, and a high current gain cutoff frequency (fT) of 250 GHz. To the best of our knowledge, this is the highest fT value reported so far for GaN-based transistors on Si. An effective electron velocity of 1.1 × 107cm/s was extracted, which is comparable with those reported for InAlN/GaN HEMTs on SiC. These excellent results indicate that GaN HEMTs on Si have a great potential for low-cost emerging mm-Wave applications. NRF (Natl Research Foundation, S’pore) 2020-06-08T09:23:45Z 2020-06-08T09:23:45Z 2017 Journal Article Xing, W., Liu, Z., Qiu, H., Ranjan, K., Gao, Y., Ng, G. I., & Palacios, T. (2018). InAlN/GaN HEMTs on Si With High fT of 250 GHz. IEEE Electron Device Letters, 39(1), 75-78. doi:10.1109/LED.2017.2773054 0741-3106 https://hdl.handle.net/10356/141469 10.1109/LED.2017.2773054 2-s2.0-85034616945 1 39 75 78 en IEEE Electron Device Letters © 2017 IEEE. All rights reserved.
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
topic	Engineering::Electrical and electronic engineering GaN High Electron Mobility Transistor (HEMT)
spellingShingle	Engineering::Electrical and electronic engineering GaN High Electron Mobility Transistor (HEMT) Xing, Weichuan Liu, Zhihong Qiu, Haodong Ranjan, Kumud Gao, Yu Ng, Geok Ing Palacios, Tomás InAlN/GaN HEMTs on Si With High fT of 250 GHz
description	In this letter, InAlN/GaN high electron mobility transistors (HEMTs) with 40-200 nm rectangular gates and 300-700 nm source-to-drain distances were fabricated on Si substrates. The device with 40-nm gate and 300-nm source-to-drain distance exhibited a high drain current of 2.66 A/mm, a transconductance (gm) of 438 mS/mm, and a high current gain cutoff frequency (fT) of 250 GHz. To the best of our knowledge, this is the highest fT value reported so far for GaN-based transistors on Si. An effective electron velocity of 1.1 × 107cm/s was extracted, which is comparable with those reported for InAlN/GaN HEMTs on SiC. These excellent results indicate that GaN HEMTs on Si have a great potential for low-cost emerging mm-Wave applications.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Xing, Weichuan Liu, Zhihong Qiu, Haodong Ranjan, Kumud Gao, Yu Ng, Geok Ing Palacios, Tomás
format	Article
author	Xing, Weichuan Liu, Zhihong Qiu, Haodong Ranjan, Kumud Gao, Yu Ng, Geok Ing Palacios, Tomás
author_sort	Xing, Weichuan
title	InAlN/GaN HEMTs on Si With High fT of 250 GHz
title_short	InAlN/GaN HEMTs on Si With High fT of 250 GHz
title_full	InAlN/GaN HEMTs on Si With High fT of 250 GHz
title_fullStr	InAlN/GaN HEMTs on Si With High fT of 250 GHz
title_full_unstemmed	InAlN/GaN HEMTs on Si With High fT of 250 GHz
title_sort	inaln/gan hemts on si with high ft of 250 ghz
publishDate	2020
url	https://hdl.handle.net/10356/141469
_version_	1681056630709420032

InAlN/GaN HEMTs on Si With High fT of 250 GHz

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