InAlN/GaN HEMTs on Si With High fT of 250 GHz

• المؤلفون الرئيسيون: Xing, Weichuan, Liu, Zhihong, Qiu, Haodong, Ranjan, Kumud, Gao, Yu, Ng, Geok Ing, Palacios, Tomás
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2020
• الموضوعات: Engineering::Electrical and electronic engineering; GaN; High Electron Mobility Transistor (HEMT)
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/141469
• المؤسسة: Nanyang Technological University

In this letter, InAlN/GaN high electron mobility transistors (HEMTs) with 40-200 nm rectangular gates and 300-700 nm source-to-drain distances were fabricated on Si substrates. The device with 40-nm gate and 300-nm source-to-drain distance exhibited a high drain current of 2.66 A/mm, a transconducta...