GaAs/AlAs/AlGaAs quantum well infrared photodetector
The objective of this project is to calculate and analyze the subband energy levels in quantum wells of GaAs/AlGaAs and GaAs/AlAs/AlGaAs with eight-band K·P modes, and to design Quantum Well Infrared Photodectors (QWIP) from the two kinds of QWs, and to evaluate the performance of two kinds of QWIPs...
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| التنسيق: | Research Report |
| اللغة: | English |
| منشور في: |
2008
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| الوصول للمادة أونلاين: | http://hdl.handle.net/10356/14184 |
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| المؤسسة: | Nanyang Technological University |
| اللغة: | English |
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sg-ntu-dr.10356-14184 |
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sg-ntu-dr.10356-141842023-03-04T03:24:46Z GaAs/AlAs/AlGaAs quantum well infrared photodetector Fan, Weijun School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Molecular electronics The objective of this project is to calculate and analyze the subband energy levels in quantum wells of GaAs/AlGaAs and GaAs/AlAs/AlGaAs with eight-band K·P modes, and to design Quantum Well Infrared Photodectors (QWIP) from the two kinds of QWs, and to evaluate the performance of two kinds of QWIPs in comparison with the simulation results. In this project, the n-type QW structures of GaAs/AlGaAs and GaAs/AlAs/AlGaAs with specific parameters are grown by all solid source MBE on the GaAs substrates. Two material systems and quantum well structures are systematically characterized and investigated. After characterization, two kinds of samples are fabricated into QWIP devices. Some of them show evident photoresponse which well matches simulation results. 2008-11-06T01:57:14Z 2008-11-06T01:57:14Z 2007 2007 Research Report http://hdl.handle.net/10356/14184 en 44 p. application/pdf |
| institution |
Nanyang Technological University |
| building |
NTU Library |
| continent |
Asia |
| country |
Singapore Singapore |
| content_provider |
NTU Library |
| collection |
DR-NTU |
| language |
English |
| topic |
DRNTU::Engineering::Electrical and electronic engineering::Molecular electronics |
| spellingShingle |
DRNTU::Engineering::Electrical and electronic engineering::Molecular electronics Fan, Weijun GaAs/AlAs/AlGaAs quantum well infrared photodetector |
| description |
The objective of this project is to calculate and analyze the subband energy levels in quantum wells of GaAs/AlGaAs and GaAs/AlAs/AlGaAs with eight-band K·P modes, and to design Quantum Well Infrared Photodectors (QWIP) from the two kinds of QWs, and to evaluate the performance of two kinds of QWIPs in comparison with the simulation results. In this project, the n-type QW structures of GaAs/AlGaAs and GaAs/AlAs/AlGaAs with specific parameters are grown by all solid source MBE on the GaAs substrates. Two material systems and quantum well structures are systematically characterized and investigated. After characterization, two kinds of samples are fabricated into QWIP devices. Some of them show evident photoresponse which well matches simulation results. |
| author2 |
School of Electrical and Electronic Engineering |
| author_facet |
School of Electrical and Electronic Engineering Fan, Weijun |
| format |
Research Report |
| author |
Fan, Weijun |
| author_sort |
Fan, Weijun |
| title |
GaAs/AlAs/AlGaAs quantum well infrared photodetector |
| title_short |
GaAs/AlAs/AlGaAs quantum well infrared photodetector |
| title_full |
GaAs/AlAs/AlGaAs quantum well infrared photodetector |
| title_fullStr |
GaAs/AlAs/AlGaAs quantum well infrared photodetector |
| title_full_unstemmed |
GaAs/AlAs/AlGaAs quantum well infrared photodetector |
| title_sort |
gaas/alas/algaas quantum well infrared photodetector |
| publishDate |
2008 |
| url |
http://hdl.handle.net/10356/14184 |
| _version_ |
1759857800994881536 |