Metal-semiconductor-metal GeSn photodetectors on silicon for short-wave infrared applications

• Main Authors: Ghosh, Soumava, Lin, Kuan-Chih, Tsai, Cheng-Hsun, Kumar, Harshvardhan, Chen, Qimiao, Zhang, Lin, Son, Bongkwon, Tan, Chuan Seng, Kim, Munho, Mukhopadhyay, Bratati, Chang, Guo-En
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering::Semiconductors; Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics; Germanium; Photodetector
• Online Access: https://hdl.handle.net/10356/143428
• Institution: Nanyang Technological University

Metal-semiconductor-metal photodetectors (MSM PDs) are effective for monolithic integration with other optical components of the photonic circuits because of the planar fabrication technique. In this article, we present design, growth, and characterization of GeSn MSM PDs that are suitable for photonic integrated circuits. The introduction of 4% Sn in the GeSn active region also reduces the direct bandgap and shows a redshift in the optical responsivity spectra, which can extend up to 1800 nm wavelength, which means it can cover the entire telecommunication bands. The spectral responsivity increases with an increase in bias voltage caused by the high electric field, which enhances the carrier generation rate and the carrier collection efficiency. Therefore, the GeSn MSM PDs can be a suitable device for a wide range of short-wave infrared (SWIR) applications.