Metal-semiconductor-metal GeSn photodetectors on silicon for short-wave infrared applications

• Main Authors: Ghosh, Soumava, Lin, Kuan-Chih, Tsai, Cheng-Hsun, Kumar, Harshvardhan, Chen, Qimiao, Zhang, Lin, Son, Bongkwon, Tan, Chuan Seng, Kim, Munho, Mukhopadhyay, Bratati, Chang, Guo-En
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering::Semiconductors; Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics; Germanium; Photodetector
• Online Access: https://hdl.handle.net/10356/143428
• Institution: Nanyang Technological University

Metal-semiconductor-metal photodetectors (MSM PDs) are effective for monolithic integration with other optical components of the photonic circuits because of the planar fabrication technique. In this article, we present design, growth, and characterization of GeSn MSM PDs that are suitable for photo...