Fabrication of vertical side-wall submicron emitter for heterojunction bipolar transistors

• Main Authors: Radhakrishnan, K., Wang, Hong
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Research Report
• 語言: English
• 出版: 2008
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
• 在線閱讀: http://hdl.handle.net/10356/14525
• 機構: Nanyang Technological University

In this investigation, several dry etching processes have been systematically studied for submicron emitter formation for metamorphic heterojunction bipolar transistor (MHBT) devices. CH4/H2/O2 chemistry is shown to offer better side wall etch profile and smoother surface compared to other gas mixtu...