Design of AM self-capacitive transparent touch panel based on a-IGZO thin-film transistors
In this work, we propose a novel active-matrix self-capacitance touch panel circuit. Each touch pixel contains only one thin film transistor. The principle of the touch event detection is to detect the voltage change, which is caused by the change of electrode capacitance. The voltage sensing by cap...
Saved in:
Main Authors: | , , , , , , |
---|---|
Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2021
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/145676 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
id |
sg-ntu-dr.10356-145676 |
---|---|
record_format |
dspace |
spelling |
sg-ntu-dr.10356-1456762021-01-04T08:15:06Z Design of AM self-capacitive transparent touch panel based on a-IGZO thin-film transistors Wu, Kejun Zhang, Jun Li, Yuanbo Wang, Xiangzhan Liu, Yang Yu, Qi Chen, Tupei School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering Touch Panel Thin Film Transistor In this work, we propose a novel active-matrix self-capacitance touch panel circuit. Each touch pixel contains only one thin film transistor. The principle of the touch event detection is to detect the voltage change, which is caused by the change of electrode capacitance. The voltage sensing by capacitance sensor is converted to capacitive digital data which compare with default value to judge whether the touch event is touched or not. The simplest structure increase maximizes the sensing pad area and reduce the parasitic effects. An array of 5×5 capacitive sensing active-matrix self-capacitive touch panel based on the proposed solution is designed and implemented. The potential for high precision and high reliability is proven in the measurement results. National Research Foundation (NRF) Published version This work was supported in part by the National Research Foundation of Singapore under Project NRF-CRP13-2014-02, and in part by the Natural Science Foundation of China under Project 61404022, Project 61574027, and Project 61774028. 2021-01-04T08:15:06Z 2021-01-04T08:15:06Z 2020 Journal Article Wu, K., Zhang, J., Li, Y., Wang, X., Liu, Y., Yu, Q., & Chen, T. (2020). Design of AM self-capacitive transparent touch panel based on a-IGZO thin-film transistors. IEEE Access, 8, 76929-76934. doi:10.1109/access.2020.2989435 2169-3536 https://hdl.handle.net/10356/145676 10.1109/ACCESS.2020.2989435 8 76929 76934 en NRF-CRP13-2014-02 IEEE Access © 2020 IEEE. This journal is 100% open access, which means that all content is freely available without charge to users or their institutions. All articles accepted after 12 June 2019 are published under a CC BY 4.0 license, and the author retains copyright. Users are allowed to read, download, copy, distribute, print, search, or link to the full texts of the articles, or use them for any other lawful purpose, as long as proper attribution is given. application/pdf |
institution |
Nanyang Technological University |
building |
NTU Library |
continent |
Asia |
country |
Singapore Singapore |
content_provider |
NTU Library |
collection |
DR-NTU |
language |
English |
topic |
Engineering::Electrical and electronic engineering Touch Panel Thin Film Transistor |
spellingShingle |
Engineering::Electrical and electronic engineering Touch Panel Thin Film Transistor Wu, Kejun Zhang, Jun Li, Yuanbo Wang, Xiangzhan Liu, Yang Yu, Qi Chen, Tupei Design of AM self-capacitive transparent touch panel based on a-IGZO thin-film transistors |
description |
In this work, we propose a novel active-matrix self-capacitance touch panel circuit. Each touch pixel contains only one thin film transistor. The principle of the touch event detection is to detect the voltage change, which is caused by the change of electrode capacitance. The voltage sensing by capacitance sensor is converted to capacitive digital data which compare with default value to judge whether the touch event is touched or not. The simplest structure increase maximizes the sensing pad area and reduce the parasitic effects. An array of 5×5 capacitive sensing active-matrix self-capacitive touch panel based on the proposed solution is designed and implemented. The potential for high precision and high reliability is proven in the measurement results. |
author2 |
School of Electrical and Electronic Engineering |
author_facet |
School of Electrical and Electronic Engineering Wu, Kejun Zhang, Jun Li, Yuanbo Wang, Xiangzhan Liu, Yang Yu, Qi Chen, Tupei |
format |
Article |
author |
Wu, Kejun Zhang, Jun Li, Yuanbo Wang, Xiangzhan Liu, Yang Yu, Qi Chen, Tupei |
author_sort |
Wu, Kejun |
title |
Design of AM self-capacitive transparent touch panel based on a-IGZO thin-film transistors |
title_short |
Design of AM self-capacitive transparent touch panel based on a-IGZO thin-film transistors |
title_full |
Design of AM self-capacitive transparent touch panel based on a-IGZO thin-film transistors |
title_fullStr |
Design of AM self-capacitive transparent touch panel based on a-IGZO thin-film transistors |
title_full_unstemmed |
Design of AM self-capacitive transparent touch panel based on a-IGZO thin-film transistors |
title_sort |
design of am self-capacitive transparent touch panel based on a-igzo thin-film transistors |
publishDate |
2021 |
url |
https://hdl.handle.net/10356/145676 |
_version_ |
1688665648293478400 |