3D geometric engineering of the double wedge-like electrodes for filament-type RRAM device performance improvement

• المؤلفون الرئيسيون: Sun, Jianxun, Li, Yuanbo, Ye, Yiyang, Zhang, Jun, Chong, Gang Yih, Tan, Juan Boon, Liu, Zhen, Chen, Tupei
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2021
• الموضوعات: Engineering::Electrical and electronic engineering; Electrode Structure Engineering; Resistive Switching Uniformity
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/145876
• المؤسسة: Nanyang Technological University

The resistive switching variability and reliability degradation are the two major challenges that hinder the high-volume production of the Resistive Random Access Memory (RRAM) devices. In this work, a 3D electrode structure engineering method is proposed. The geometric parameters defined as electro...