Low-power and high-detectivity Ge photodiodes by in-situ heavy As doping during Ge-on-Si seed layer growth

• المؤلفون الرئيسيون: Lin, Yiding, Lee, Kwang Hong, Son, Bongkwon, Tan, Chuan Seng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2021
• الموضوعات: Engineering::Electrical and electronic engineering::Semiconductors; Germanium; Photodetector
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/146080

Germanium (Ge)-based photodetectors have become one of the mainstream components in photonic-integrated circuits (PICs). Many emerging PIC applications require the photodetectors to have high detectivity and low power consumption. Herein, we demonstrate high-detectivity Ge vertical p-i-n photodiodes...