Exploring the impact of variability in resistance distributions of RRAM on the prediction accuracy of deep learning neural networks

In this work, we explore the use of the resistive random access memory (RRAM) device as a synapse for mimicking the trained weights linking neurons in a deep learning neural network (DNN) (AlexNet). The RRAM devices were fabricated in-house and subjected to 1000 bipolar read-write cycles to measure...

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Main Authors: Prabhu, Nagaraj Lakshmana, Loy, Desmond Jia Jun, Dananjaya, Putu Andhita, Lew, Wen Siang, Toh, Eng Huat, Raghavan, Nagarajan
Other Authors: School of Physical and Mathematical Sciences
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Language:English
Published: 2021
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Online Access:https://hdl.handle.net/10356/148658
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-1486582023-02-28T19:55:49Z Exploring the impact of variability in resistance distributions of RRAM on the prediction accuracy of deep learning neural networks Prabhu, Nagaraj Lakshmana Loy, Desmond Jia Jun Dananjaya, Putu Andhita Lew, Wen Siang Toh, Eng Huat Raghavan, Nagarajan School of Physical and Mathematical Sciences Science::Physics Convolutional Neural Network Look-up-table In this work, we explore the use of the resistive random access memory (RRAM) device as a synapse for mimicking the trained weights linking neurons in a deep learning neural network (DNN) (AlexNet). The RRAM devices were fabricated in-house and subjected to 1000 bipolar read-write cycles to measure the resistances recorded for Logic-0 and Logic-1 (we demonstrate the feasibility of achieving eight discrete resistance states in the same device depending on the RESET stop voltage). DNN simulations have been performed to compare the relative error between the output of AlexNet Layer 1 (Convolution) implemented with the standard backpropagation (BP) algorithm trained weights versus the weights that are encoded using the measured resistance distributions from RRAM. The IMAGENET dataset is used for classification purpose here. We focus only on the Layer 1 weights in the AlexNet framework with 11 × 11 × 96 filters values coded into a binary floating point and substituted with the RRAM resistance values corresponding to Logic-0 and Logic-1. The impact of variability in the resistance states of RRAM for the low and high resistance states on the accuracy of image classification is studied by formulating a look-up table (LUT) for the RRAM (from measured I-V data) and comparing the convolution computation output of AlexNet Layer 1 with the standard outputs from the BP-based pre-trained weights. This is one of the first studies dedicated to exploring the impact of RRAM device resistance variability on the prediction accuracy of a convolutional neural network (CNN) on an AlexNet platform through a framework that requires limited actual device switching test data. Agency for Science, Technology and Research (A*STAR) Economic Development Board (EDB) National Research Foundation (NRF) Published version This research was funded by A*STAR BRENAIC Research Project No. A18A5b0056 and the APC associated with the publication as well. Funding support for fabrication and characterization of devices were provided by the Economic Development Board EDB-IPP (RCA – 16/216) program and the Industry-IHL Partnership Program (NRF2015-IIP001-001). 2021-05-31T07:54:07Z 2021-05-31T07:54:07Z 2020 Journal Article Prabhu, N. L., Loy, D. J. J., Dananjaya, P. A., Lew, W. S., Toh, E. H. & Raghavan, N. (2020). Exploring the impact of variability in resistance distributions of RRAM on the prediction accuracy of deep learning neural networks. Electronics, 9(3). https://dx.doi.org/10.3390/electronics9030414 2079-9292 https://hdl.handle.net/10356/148658 10.3390/electronics9030414 2-s2.0-85081022579 3 9 en A18A5b0056 RCA – 16/216 NRF2015-IIP001-001 Electronics © 2020 The Author(s). Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Science::Physics
Convolutional Neural Network
Look-up-table
spellingShingle Science::Physics
Convolutional Neural Network
Look-up-table
Prabhu, Nagaraj Lakshmana
Loy, Desmond Jia Jun
Dananjaya, Putu Andhita
Lew, Wen Siang
Toh, Eng Huat
Raghavan, Nagarajan
Exploring the impact of variability in resistance distributions of RRAM on the prediction accuracy of deep learning neural networks
description In this work, we explore the use of the resistive random access memory (RRAM) device as a synapse for mimicking the trained weights linking neurons in a deep learning neural network (DNN) (AlexNet). The RRAM devices were fabricated in-house and subjected to 1000 bipolar read-write cycles to measure the resistances recorded for Logic-0 and Logic-1 (we demonstrate the feasibility of achieving eight discrete resistance states in the same device depending on the RESET stop voltage). DNN simulations have been performed to compare the relative error between the output of AlexNet Layer 1 (Convolution) implemented with the standard backpropagation (BP) algorithm trained weights versus the weights that are encoded using the measured resistance distributions from RRAM. The IMAGENET dataset is used for classification purpose here. We focus only on the Layer 1 weights in the AlexNet framework with 11 × 11 × 96 filters values coded into a binary floating point and substituted with the RRAM resistance values corresponding to Logic-0 and Logic-1. The impact of variability in the resistance states of RRAM for the low and high resistance states on the accuracy of image classification is studied by formulating a look-up table (LUT) for the RRAM (from measured I-V data) and comparing the convolution computation output of AlexNet Layer 1 with the standard outputs from the BP-based pre-trained weights. This is one of the first studies dedicated to exploring the impact of RRAM device resistance variability on the prediction accuracy of a convolutional neural network (CNN) on an AlexNet platform through a framework that requires limited actual device switching test data.
author2 School of Physical and Mathematical Sciences
author_facet School of Physical and Mathematical Sciences
Prabhu, Nagaraj Lakshmana
Loy, Desmond Jia Jun
Dananjaya, Putu Andhita
Lew, Wen Siang
Toh, Eng Huat
Raghavan, Nagarajan
format Article
author Prabhu, Nagaraj Lakshmana
Loy, Desmond Jia Jun
Dananjaya, Putu Andhita
Lew, Wen Siang
Toh, Eng Huat
Raghavan, Nagarajan
author_sort Prabhu, Nagaraj Lakshmana
title Exploring the impact of variability in resistance distributions of RRAM on the prediction accuracy of deep learning neural networks
title_short Exploring the impact of variability in resistance distributions of RRAM on the prediction accuracy of deep learning neural networks
title_full Exploring the impact of variability in resistance distributions of RRAM on the prediction accuracy of deep learning neural networks
title_fullStr Exploring the impact of variability in resistance distributions of RRAM on the prediction accuracy of deep learning neural networks
title_full_unstemmed Exploring the impact of variability in resistance distributions of RRAM on the prediction accuracy of deep learning neural networks
title_sort exploring the impact of variability in resistance distributions of rram on the prediction accuracy of deep learning neural networks
publishDate 2021
url https://hdl.handle.net/10356/148658
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