Study of leakage current of High-K dielectrics
BST thin film is one of the metal oxides that show high dielectric constant and very good dielectric properties such as long lasting time, low dielectric lose or fast electric response. Another interesting property of this material is that it shows resistive switching behavior with the help of ox...
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| Format: | Final Year Project |
| Language: | English |
| Published: |
2009
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| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/15235 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | BST thin film is one of the metal oxides that show high dielectric constant and
very good dielectric properties such as long lasting time, low dielectric lose or
fast electric response. Another interesting property of this material is that it
shows resistive switching behavior with the help of oxygen vacancies inside.
In this project BST thin film with thickness around 80nm was investigated in the
form of Pt-BST-Au capacitors. I-V characteristic of this capacitor was measured.
Biasing this capacitor at high voltage and temperature, which is believed to
move oxygen vacancies in BST thin film, affects the barrier height at the
interface. Barrier height of top and bottom interface of this capacitor was
calculated based on Schottky conduction mechanism I-V relationship.
Comparing the calculated barrier height before and after biasing, we observe
results that are quite consistence with the predictions.
From the results we can conclude that motion of oxygen vacancies in BST thin
film is possible under biasing. Switching of BST thin film resistance can be done
by applying external electric field at a certain temperature. |
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