Study of the effect of forward gate bias stress on the reliability of AlGaN/GaN HEMTs on SI

• Main Author: Gao, Yu
• Other Authors: Gan Chee Lip
• Format: Thesis-Doctor of Philosophy
• Language: English
• Published: Nanyang Technological University 2021
• Subjects: Engineering::Materials
• Online Access: https://hdl.handle.net/10356/152654
• Institution: Nanyang Technological University

AlGaN/GaN high electron mobility transistors (HEMTs) have shown promising capabilities for high frequency and high-power applications. As 5G technology and autonomous vehicles become more and more attractive, HEMTs will start to play an increasingly important role in the semiconductor industry. Whil...