Study of the effect of forward gate bias stress on the reliability of AlGaN/GaN HEMTs on SI
AlGaN/GaN high electron mobility transistors (HEMTs) have shown promising capabilities for high frequency and high-power applications. As 5G technology and autonomous vehicles become more and more attractive, HEMTs will start to play an increasingly important role in the semiconductor industry. Whil...
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Main Author: | Gao, Yu |
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Other Authors: | Gan Chee Lip |
Format: | Thesis-Doctor of Philosophy |
Language: | English |
Published: |
Nanyang Technological University
2021
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/152654 |
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Institution: | Nanyang Technological University |
Language: | English |
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