Oxide-defects driven study on reliability and synaptic response characterization of logic devices
The thesis discusses our studies on the key characterization issues and physical mechanisms of channel-hot carrier (CHC) stressing in reliability and variability in nanoscale MOS devices. This provides physical understanding of HCD in reliability qualification and helps reliability-aware circuits de...
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| Format: | Thesis-Doctor of Philosophy |
| Language: | English |
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Nanyang Technological University
2021
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| Online Access: | https://hdl.handle.net/10356/152681 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | The thesis discusses our studies on the key characterization issues and physical mechanisms of channel-hot carrier (CHC) stressing in reliability and variability in nanoscale MOS devices. This provides physical understanding of HCD in reliability qualification and helps reliability-aware circuits design in nanoscale CMOS technology. In addition, successful demonstration of synaptic characteristics with a logic transistor by modulating charge capture/emission kinetics in gate oxide shows the potential of realizing neuromorphic systems capable of encoding and processing complex spatiotemporal information. |
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