Oxide-defects driven study on reliability and synaptic response characterization of logic devices

The thesis discusses our studies on the key characterization issues and physical mechanisms of channel-hot carrier (CHC) stressing in reliability and variability in nanoscale MOS devices. This provides physical understanding of HCD in reliability qualification and helps reliability-aware circuits de...

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Main Author:	Ju, Xin
Other Authors:	Ang Diing Shenp
Format:	Thesis-Doctor of Philosophy
Language:	English
Published:	Nanyang Technological University 2021
Subjects:	Engineering::Electrical and electronic engineering::Microelectronics
Online Access:	https://hdl.handle.net/10356/152681
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Institution:	Nanyang Technological University
Language:	English

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spelling	sg-ntu-dr.10356-1526812023-07-04T16:47:58Z Oxide-defects driven study on reliability and synaptic response characterization of logic devices Ju, Xin Ang Diing Shenp School of Electrical and Electronic Engineering EDSAng@ntu.edu.sg Engineering::Electrical and electronic engineering::Microelectronics The thesis discusses our studies on the key characterization issues and physical mechanisms of channel-hot carrier (CHC) stressing in reliability and variability in nanoscale MOS devices. This provides physical understanding of HCD in reliability qualification and helps reliability-aware circuits design in nanoscale CMOS technology. In addition, successful demonstration of synaptic characteristics with a logic transistor by modulating charge capture/emission kinetics in gate oxide shows the potential of realizing neuromorphic systems capable of encoding and processing complex spatiotemporal information. Doctor of Philosophy 2021-09-13T06:52:45Z 2021-09-13T06:52:45Z 2021 Thesis-Doctor of Philosophy Ju, X. (2021). Oxide-defects driven study on reliability and synaptic response characterization of logic devices. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/152681 https://hdl.handle.net/10356/152681 10.32657/10356/152681 en This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License (CC BY-NC 4.0). application/pdf Nanyang Technological University
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
language	English
topic	Engineering::Electrical and electronic engineering::Microelectronics
spellingShingle	Engineering::Electrical and electronic engineering::Microelectronics Ju, Xin Oxide-defects driven study on reliability and synaptic response characterization of logic devices
description	The thesis discusses our studies on the key characterization issues and physical mechanisms of channel-hot carrier (CHC) stressing in reliability and variability in nanoscale MOS devices. This provides physical understanding of HCD in reliability qualification and helps reliability-aware circuits design in nanoscale CMOS technology. In addition, successful demonstration of synaptic characteristics with a logic transistor by modulating charge capture/emission kinetics in gate oxide shows the potential of realizing neuromorphic systems capable of encoding and processing complex spatiotemporal information.
author2	Ang Diing Shenp
author_facet	Ang Diing Shenp Ju, Xin
format	Thesis-Doctor of Philosophy
author	Ju, Xin
author_sort	Ju, Xin
title	Oxide-defects driven study on reliability and synaptic response characterization of logic devices
title_short	Oxide-defects driven study on reliability and synaptic response characterization of logic devices
title_full	Oxide-defects driven study on reliability and synaptic response characterization of logic devices
title_fullStr	Oxide-defects driven study on reliability and synaptic response characterization of logic devices
title_full_unstemmed	Oxide-defects driven study on reliability and synaptic response characterization of logic devices
title_sort	oxide-defects driven study on reliability and synaptic response characterization of logic devices
publisher	Nanyang Technological University
publishDate	2021
url	https://hdl.handle.net/10356/152681
_version_	1772828906645094400

Oxide-defects driven study on reliability and synaptic response characterization of logic devices

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