Oxide-defects driven study on reliability and synaptic response characterization of logic devices

• Main Author: Ju, Xin
• Other Authors: Ang Diing Shenp
• Format: Thesis-Doctor of Philosophy
• Language: English
• Published: Nanyang Technological University 2021
• Subjects: Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: https://hdl.handle.net/10356/152681
• Institution: Nanyang Technological University

The thesis discusses our studies on the key characterization issues and physical mechanisms of channel-hot carrier (CHC) stressing in reliability and variability in nanoscale MOS devices. This provides physical understanding of HCD in reliability qualification and helps reliability-aware circuits de...