Oxide-defects driven study on reliability and synaptic response characterization of logic devices
The thesis discusses our studies on the key characterization issues and physical mechanisms of channel-hot carrier (CHC) stressing in reliability and variability in nanoscale MOS devices. This provides physical understanding of HCD in reliability qualification and helps reliability-aware circuits de...
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| 格式: | Thesis-Doctor of Philosophy |
| 語言: | English |
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Nanyang Technological University
2021
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/152681 |
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| 機構: | Nanyang Technological University |
| 語言: | English |