Long wavelength (λ > 13 μm) quantum cascade laser based on diagonal transition and three-phonon-resonance design

Long wavelength (λ > 13 μm) quantum cascade laser based on diagonal transition and three-phonon-resonance design

An InP-based quantum cascade laser structure emitting at a wavelength of 13.6 μm is proposed and demonstrated. The active region is based on a diagonal transition and three-phonon-resonance design. A 5 mm long, 30 μm wide high-reflection coated device with a double channel ridge waveguide structure...

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Bibliographic Details
Main Authors: Jin, Yuhao, Li, Jinghao, Chua, Yun Da, Tan, Kian Hua, Wicaksono, Satrio, Sirtori, Carlo, Yoon, Soon Fatt, Wang, Qi Jie
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2021
Subjects:
Engineering::Electrical and electronic engineering
III-V Semiconductors
Indium Phosphide
Online Access:https://hdl.handle.net/10356/153565
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Institution: Nanyang Technological University
Language: English
Description
Summary:An InP-based quantum cascade laser structure emitting at a wavelength of 13.6 μm is proposed and demonstrated. The active region is based on a diagonal transition and three-phonon-resonance design. A 5 mm long, 30 μm wide high-reflection coated device with a double channel ridge waveguide structure has shown a threshold current density of 3.0 kA/cm2, a dynamic range of 4.4 kA/cm2, a peak output power close to 1 W, and an average optical power up to 11.7 mW at 3% duty cycle, at 293 K. The laser shows a characteristic temperature T0 of 314 K and T1 of 336 K over a temperature range from 283 to 313 K.

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