Grating and hole-array enhanced germanium lateral p-i-n photodetectors on an insulator platform

• المؤلفون الرئيسيون: Zhou, Hao, Chen, Qimiao, Wu, Shaoteng, Zhang, Lin, Guo, Xin, Son, Bongkwon, Tan, Chuan Seng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2022
• الموضوعات: Engineering::Electrical and electronic engineering::Semiconductors; Germanium; Photodetector
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/155045
• المؤسسة: Nanyang Technological University

Germanium (Ge) lateral p-i-n photodetectors with grating and hole-array structures were fabricated on a Ge-on-insulator (GOI) platform. Owing to the low threading dislocation density (TDD) in the transferred Ge layer, a low dark current of 0.279 μA was achieved at -1 V. The grating structure enha...