Studies of gallium nitride high electron mobility transistors (HEMTs)

• المؤلف الرئيسي: Tie, Keven Guo Sheng
• مؤلفون آخرون: Ng Geok Ing
• التنسيق: Final Year Project
• اللغة: English
• منشور في: Nanyang Technological University 2022
• الموضوعات: Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/157799

Gallium Nitride (GaN) is a Group III/V wide bandgap nitride-based material that offer many unique properties. It not only offers higher breakdown strength, faster switching speed and lower on resistance, it significantly outperforms the traditional silicon-based device. These properties have been...