Measurement and error analysis of Cu film thickness with Ta barrier layer on wafer for CMP application

• المؤلفون الرئيسيون: Qu, Zilian, Wang, Wensong, Li, Xueli, Li, Qi, Zheng, Yuanjin
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2022
• الموضوعات: Engineering::Electrical and electronic engineering; Chemical Mechanical Polishing; Eddy Current Based Measurement System
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/159502

Accurate thickness measurement of copper (Cu) film on silicon (Si)-based wafers is very important in the chemical mechanical polishing (CMP) process. For thickness measurement of Cu film, the eddy current method is widely adopted due to noncontact, high-efficiency, and high-accuracy characteristics....